FDMS8320L datasheet, mosfet equivalent, ON Semiconductor

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Features and benefits

* Max rDS(on) = 1.1 mΩ at VGS = 10 V, ID = 32 A
* Max rDS(on) = 1.5 mΩ at VGS = 4.5 V, ID = 27 A
* Advanced Package and Silicon combination for low rDS(on) an.

Application

* OringFET / Load Switching
* Synchronous Rectification
* DC-DC Conversion Top Pin 1 Bottom Pin 1 S S S.

Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charg.

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